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1-3. Physical properties of graphene and 2D materials

| Participants

member
member_detail
Name :Yunho Kim
Affiliation :Korea Research Institute of Chemical Technology
Tel :+82-42-860-7274
E-mail :yunho@krict.re.kr
Homepage :http://www.krict.re.kr/chemistry_center02_introduction/show/view/code/GE20/id/101031

| Research Purpose

Flexible electronic materials such as flexible substrate, semiconductor, and electrodes are currently of great interest in the electronics sector. And, high-performance flexible dielectrics with high capacitance and low leakage current should be developed for future flexible electronics. This research program will provide the opportunity to lead cutting edge technologies for future flexible electronics with low-voltage operation based on flexible dielectric materials.

| Contents

Topic 1. Development of flexible and ultra-thin gate dielectric materials based on polyurea

- Polyurea based dielectric materials with high mechanical strength and chemical resistance
- Controlling the dielectric properties of polyurea thin films by strong hydrogen bonding
- Development solution process for ultra-thin, -smooth film of polyurea dielectric layer

Topic 2. Development of polynorbornene dielectric materials with high thermal resistance

- New synthetic procedure for polynorbornene with high thermal resistance and mechanical stability
- Controlling the surface property based on new core structures of polynorbornene
- Development solution process for ultra-thin, -smooth film of polynorbornene dielectric layer

Topic 3. Characterization of flexibility and reliability of flexible dielectric layer

- MIM structure of flexible gate dielectric materials on flexible substrate
- Measurement of electrical and mechanical property of flexible dielectric materials
- Mechanically stability and reliability test using harsh bending condition

Topic 4. Development of flexible- and low-voltage organic transistor

- Ultra-thin flexible gate dielectric layer with high capacitance by solution process
- Surface modification of organic gate insulator for high performance transistors
- Low-voltage operation of TFT based on high capacitance dielectric layer

| Expected Contribution

- Providing fundamental technologies to demonstrate novel flexible electronics applications through study on flexible polymeric dielectric materials and solution-processing techniques
- Improving flexibility and reliability of dielectric materials with multicomponent materials and controlling physical interaction such as hydrogen bond for high-performance devices
- Developing fundamental knowledge in dielectric materials and applications through study defects on new synthetic procedure
- Driving development of flexible electronics and related industry, and demonstration of large-area flexible displays

| Representative Research Achievement

1. S. Yoo, Y. H. Kim, J.-W. Ka, Y. S. Kim, M. H. Yi, K.-W. Jang, Org. Elec. 2015, 23, 213.
2. A. Kim, Y. Jo, J. C. Won, Y. Choi, K.-W, Jang, S. Jeong, Y. H. Kim, Adv. Mater. Inter. 2015, 2, 1500129.
3. Y.-S. Choe, M. H. Yi, J.-H. Kim, Y. H. Kim, K.-W. Jang, Phys. Chem. Phys. Chem. 2016, 18, 8522
4. S. Yoo, M. H. Yi, Y. H. Kim, K.-W. Jang, Org. Elec. 2016, 33, 263.
5. Y.-S. Choe, M. H. Yi, G.-S. Ryu, Y.-Y. Noh, Y. H. Kim, K.-W. Jang, Org. Elec. 2016, 36, 171.